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APT60M75L2LL 600V 73A 0.075 POWER MOS 7 (R) R MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current 1 TO-264 Max * Increased Power Dissipation * Easier To Drive * Popular TO-264 MAX Package D G S All Ratings: TC = 25C unless otherwise specified. APT60M75L2LL UNIT Volts Amps 600 73 292 30 40 893 7.14 -55 to 150 300 73 50 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/C C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 3200 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance 2 MIN TYP MAX UNIT Volts 600 0.075 100 500 100 3 5 (VGS = 10V, ID = 36.5A) Ohms A nA Volts 9-2004 050-7097 Rev B Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5mA) APT Website - http://www.advancedpower.com CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT60M75L2LL Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 300V ID = 73A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 300V ID = 73A @ 25C RG = 0.6 6 INDUCTIVE SWITCHING @ 25C VDD = 400V, VGS = 15V ID = 73A, RG = 5 6 INDUCTIVE SWITCHING @ 125C VDD = 400V VGS = 15V ID = 73A, RG = 5 MIN TYP MAX UNIT 8930 1130 50 195 48 100 23 19 55 8 1515 1745 2345 1950 MIN TYP MAX UNIT Amps Volts ns C V/ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy ns J SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD t rr Q rr dv/ dt Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage 1 2 73 292 1.3 857 26 8 MIN TYP MAX (Body Diode) (VGS = 0V, IS = -73A) Reverse Recovery Time (IS = -73A, dl S/dt = 100A/s) Reverse Recovery Charge (IS = -73A, dl S/dt = 100A/s) Peak Diode Recovery dv/ dt 5 THERMAL CHARACTERISTICS Symbol RJC RJA Characteristic Junction to Case Junction to Ambient UNIT C/W 0.14 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting Tj = +25C, L = 1.20mH, RG = 25, Peak IL = 73A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID73A di/dt 700A/s VR 600V TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and inforation contained herein. 0.16 , THERMAL IMPEDANCE (C/W) 0.14 0.9 0.12 0.10 0.08 0.06 0.04 0.02 0 10-5 0.3 0.7 0.5 Note: PDM t1 t2 Peak TJ = PDM x ZJC + TC Duty Factor D = t1/t2 9-2004 050-7097 Rev B Z JC SINGLE PULSE 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 0.1 0.05 1.0 Typical Performance Curves ID, DRAIN CURRENT (AMPERES) 200 180 160 140 120 100 80 60 40 20 0 APT60M75L2LL VGS =15 &10V 8V 7.5V 7V 6.5 RC MODEL Junction temp. (C) 0.0484 Power (watts) 0.0903 Case temperature. (C) 0.400F 0.0236F 6V 5.5V FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 180 160 ID, DRAIN CURRENT (AMPERES) VDS> ID (ON) x RDS(ON) MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40 V 140 120 100 80 60 40 20 0 0 1 2 3 4 5 6 7 8 9 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS TJ = -50C TJ = +25C TJ = +125C 1.30 1.20 1.10 1.00 0.90 0.80 GS NORMALIZED TO = 10V @ I = 36.5A D VGS=10V VGS=20V 0 80 70 ID, DRAIN CURRENT (AMPERES) BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 1.15 20 40 60 80 100 120 140 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 60 50 40 30 20 10 0 25 1.10 1.05 1.00 0.95 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 0.90 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 2.5 I D = 36.5A = 10V V 2.0 VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) GS 1.1 1.0 0.9 0.8 0.7 0.6 -50 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, RDS(ON) vs. TEMPERATURE -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 050-7097 Rev B 9-2004 292 OPERATION HERE LIMITED BY RDS (ON) 20,000 10,000 APT60M75L2LL Ciss ID, DRAIN CURRENT (AMPERES) 100 50 100S C, CAPACITANCE (pF) 1,000 Coss 10 1mS TC =+25C TJ =+150C SINGLE PULSE 10mS 100 Crss 1 1 10 100 600 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA I D = 73A IDR, REVERSE DRAIN CURRENT (AMPERES) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 16 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 200 100 TJ =+150C TJ =+25C 10 12 VDS= 120V VDS= 300V 8 VDS= 480V 10 4 50 100 150 200 250 300 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE 160 140 120 td(off) V DD G 0 0 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 180 160 140 120 V DD G = 400V R = 5 T = 125C J L = 100H td(on) and td(off) (ns) = 400V tr and tf (ns) 100 80 60 40 20 0 R = 5 T = 125C J 100 80 60 tf L = 100H tr td(on) 40 20 10 70 90 110 130 ID (A) FIGURE 14, DELAY TIMES vs CURRENT V DD G 30 50 70 90 110 130 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 8000 7000 SWITCHING ENERGY (J) V I DD 0 10 30 50 5000 = 400V = 400V R = 5 D J = 73A 4000 Eon and Eoff (J) T = 125C J T = 125C Eoff L = 100H E ON includes diode reverse recovery 6000 5000 4000 3000 2000 1000 L = 100H EON includes diode reverse recovery 3000 Eoff 2000 Eon 1000 050-7097 Rev B 9-2004 Eon 0 70 90 110 130 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT 10 30 50 10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE 0 0 5 APT60M75L2LL 90% 10% Gate Voltage TJ125C TJ125C td(off) td(on) 90% Drain Current 90% Gate Voltage Drain Voltage tr tf 10% 10% 5% Drain Voltage Switching Energy 0 Drain Current 5% Switching Energy Figure 18, Turn-on Switching Waveforms and Definitions Figure 19, Turn-off Switching Waveforms and Definitions APT60DF60 V DD ID V DS G D.U.T. Figure 20, Inductive Switching Test Circuit TO-264 MAXTM(L2) Package Outline 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807) 5.79 (.228) 6.20 (.244) Drain 25.48 (1.003) 26.49 (1.043) 2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842) 2.29 (.090) 2.69 (.106) Source 0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118) 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 050-7097 Rev B 9-2004 Gate Drain |
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